Method of pattern formation and method of producing polysilane resin precursor
US10747113B2 · kind B2 · utility
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Key dates
| Filing date | Dec 27, 2017 |
| Grant date | Aug 18, 2020 |
| Priority date | — |
| Expiry date | Mar 25, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/327
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of pattern formation. The method is capable of inhibiting a post-development residue from remaining on a support equipped with an electrode, and a method of producing a polysilane-polysiloxane resin precursor that is suitable for use in the method of pattern formation. The method of pattern formation includes forming a film of a silicon-containing composition on the support equipped with an electrode forming a film of a resin composition on the film of a silicon-containing composition, and forming the film of a resin composition into a pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.