Memristive device and method based on ion migration over one or more nanowires
US10748608B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2018 |
| Grant date | Aug 18, 2020 |
| Priority date | — |
| Expiry date | Oct 12, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/51
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Aspects of the subject disclosure may include, for example, applying a setting voltage across first and second electrodes, wherein a nanowire with a first electrical resistance is electrically connected between the first and second electrodes, wherein the applying of the setting voltage causes a migration of ions from the first and/or second electrodes to a surface of the nanowire, and wherein the migration of ions effectuates a reduction of electrical resistance of the nanowire from the first electrical resistance to a second electrical resistance that is lower than the first electrical resistance; and applying a reading voltage across the pair of electrodes, wherein the reading voltage is less than the setting voltage, and wherein the reading voltage is sufficiently small such that the applying of the reading voltage causes no more than an insignificant change of the electrical resistance of the nanowire from the second electrical resistance. Other embodiments are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.