Patent · US Active

Dielectric gap-filling process for semiconductor device

US10748808B2 · kind B2 · utility

6Cited by

1References

20Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Cheng-I Lin · Cupertino, US
Bang-Tai Tang · New Taipei, TW

Key dates

Filing date	Jul 16, 2018
Grant date	Aug 18, 2020
Priority date	—
Expiry date	Jul 16, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/017
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device and a method of forming the same are provided. The method includes forming a trench in a substrate. A liner layer is formed along sidewalls and a bottom of the trench. A silicon-rich layer is formed over the liner layer. Forming the silicon-rich layer includes flowing a first silicon precursor into a process chamber for a first time interval, and flowing a second silicon precursor and a first oxygen precursor into the process chamber for a second time interval. The second time interval is different from the first time interval. The method further includes forming a dielectric layer over the silicon-rich layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.