Patent · US Active

Metallisation for semiconductor device

US10748847B2 · kind B2 · utility

1Cited by

7References

15Claims

0Family size

Assignee

Nexperia B.V. · NL

Inventors

Paul Huiskamp · Wijchen, NL
Godfried Henricus Josephus Notermans · Hamburg, DE

Key dates

Filing date	Sep 9, 2015
Grant date	Aug 18, 2020
Priority date	—
Expiry date	Sep 9, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/13147
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present disclosure relates to a semiconductor device comprising a metallisation stack. The metallisation stack may include a first metallisation layer and a second metallisation layer. The first metallisation layer may be electrically connected to the second metallisation layer by a two or more stacked inter-metal vias.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.