Semiconductor device and method for manufacturing the same
US10749005B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2018 |
| Grant date | Aug 18, 2020 |
| Priority date | — |
| Expiry date | Mar 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/112
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a semiconductor device and a method for manufacturing the same. A semiconductor device according to a performing mode includes a substrate, a semiconductor layer located on one side of the substrate, a source and a drain located on one side of the semiconductor layer away from the substrate, and a gate located between the source and the drain, and an isolation structure disposed on one side of the semiconductor layer away from the substrate, one end of the isolation structure being disposed at a side close to the source, and the other end being disposed at a side close to the drain and in direct contact with the surface layer of the semiconductor device, the isolation structure covering the gate or a part of the gate, the isolation structure being an integrally formed structure and forming a chamber with the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.