Preparation method for fully transparent thin film transistor
US10749016B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2017 |
| Grant date | Aug 18, 2020 |
| Priority date | — |
| Expiry date | Mar 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0241
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a preparation method for a fully-transparent thin film transistor, wherein a transparent conductive gate electrode layer of the fully-transparent thin film transistor is used as a photolithographic mask, a photoresist is exposed through a rear surface of a transparent substrate, the transparent substrate has a transmittance higher than 60% to an exposure light beam, and the transparent conductive gate electrode layer has a transmittance lower than 5% to the exposure light beam. In the preparation method for a fully-transparent thin film transistor provided by the present invention, by using a self-aligned technology, the process complexity and the feature size of the device can both be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.