Method for making ferroelectric material thin films
US10749056B2 · kind B2 · utility
1Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2017 |
| Grant date | Aug 18, 2020 |
| Priority date | — |
| Expiry date | Dec 3, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/768
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method of growing a FE material thin film using physical vapor deposition by pulsed laser deposition or RF sputtering is disclosed. The method involves creating a target to be used for the pulsed laser deposition in order to create a KBNNO thin film. The resultant KBNNO thin film is able to be used in photovoltaic cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.