Preparation method and application of light-responsive LED based on GaN/CsPbBrxI3-x heterojunction
US10749065B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2019 |
| Grant date | Aug 18, 2020 |
| Priority date | — |
| Expiry date | Feb 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/032
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A light-responsive LED (Light Emitting Diode) based on a GaN/CsPbBrxI3-x heterojunction, a preparation method and an application thereof are provided. The light-responsive LED consists of a GaN base layer on a sapphire substrate, an all-inorganic perovskite CsPbBrxI3-x film, an indium electrode and a carbon electrode, forming an In/GaN/CsPbBrxI3-x/C structure, wherein: in the CsPbBrxI3-x film, 0<x<3; the all-inorganic perovskite CsPbBrxI3-x film and the indium electrode are arranged on the GaN base layer in parallel; and the carbon electrode is arranged on the all-inorganic perovskite CsPbBrxI3-x film. The CsPbBrxI3-x film is prepared through a low-temperature anti-solvent method. The prepared LED device is able to realize integration of self-powered visible detection and visible luminescence, and able to work as a transmitting terminal or a receiving terminal in visible light wireless communication, which solves a difficult problem of backward communication in visible light wireless communication technology.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.