Semiconductor light-emitting device

US10749075B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• Chao-Hsing Chen · Tainan, TW
• Jia-Kuen Wang · Hsinchu, TW
• Tzu-Yao Tseng · Hsinchu, TW
• Tsung-Hsun Chiang · Hsinchu, TW
• Bo-Jiun Hu · Beijing, CN
• Wen-Hung Chuang · Hsinchu, TW
• Yu-Ling Lin · Hsinchu, TW

Key dates

• Filing date: Jul 23, 2019
• Grant date: Aug 18, 2020
• Expiry date: Jul 23, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/84

Abstract

A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer; a plurality of first trenches penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer; a second trench penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer, wherein the second trench is disposed near an outmost edge of the active layer, and surrounds the active layer and the plurality of first trenches; a patterned metal layer formed on the second semiconductor layer and formed in one of the plurality of first trenches or the second trench; and a first pad portion and a second pad portion both formed on the second semiconductor layer and electrically connecting the second semiconductor layer and the first semiconductor layer respectively.