Method of fabricating organo-lead halide perovskites thin single crystals
US10749120B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2017 |
| Grant date | Aug 18, 2020 |
| Priority date | — |
| Expiry date | Sep 5, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07F7/24
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Embodiments of the present disclosure describe a method of fabricating a semiconducting material, comprising fixing a first substrate to a second substrate via a bonding material sufficient to form a two-substrate support with a cavity region, applying an organo-lead halide perovskite precursor solution to the cavity region of the two-substrate support, and annealing sufficient to form in the cavity region a semiconducting material including an organo-lead halide perovskite thin single crystal. Embodiments of the present disclosure further describe a transistor comprising a source terminal, a drain terminal, a channel layer extending between the source terminal and the drain terminal and including an organo-lead halide perovskite thin single crystal, a gate terminal, and an insulating layer separating the gate terminal from the source terminal, drain terminal, and channel layer sufficient to form a transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.