Extreme ultraviolet (EUV) exposure apparatus and method of manufacturing semiconductor device using the same
US10754254B1 · kind B1 · utility
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20Claims
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Key dates
| Filing date | Nov 8, 2019 |
| Grant date | Aug 25, 2020 |
| Priority date | — |
| Expiry date | Nov 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05G2/009
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An extreme ultraviolet (EUV) exposure apparatus includes a chamber, an EUV source in the chamber and configured to generate an EUV beam, an optical system above the EUV source and configured to provide the EUV beam to a substrate, a substrate stage in the chamber and configured to receive the substrate, a reticle stage in the chamber and configured to hold a reticle that is configured to project the EUV beam onto the substrate, and a plasma source configured to provide plasma to the reticle to electrically neutralize the reticle charged by the EUV beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.