Patent · US Active

Carbon nanotube ternary SRAM cell with improved stability and low standby power

US10755769B2 · kind B2 · utility

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2Claims

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Assignee

Wenzhou University · CN

Inventors

Gang Li · Beijing, CN
Pengjun Wang · Zhejiang, CN
Yuejun Zhang · Zhejiang, CN
Bo-Yan Chen · Zhejiang, CN

Key dates

Filing date	May 6, 2019
Grant date	Aug 25, 2020
Priority date	—
Expiry date	May 6, 2039

Classification

Technology area (CPC G)Physics
CPC primaryG11C7/02
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A carbon nanotube ternary SRAM cell with an improved stability and low standby power comprises a write bit line, a read bit line, a column select bit line, an inverted column select bit line, a write word line, an inverted write word line, a read word line, an inverted read word line, a first P-type CNFET, a second P-type CNFET, a third P-type CNFET, a fourth P-type CNFET, a fifth P-type CNFET, a sixth P-type CNFET, a seventh P-type CNFET, an eighth P-type CNFET, a ninth P-type CNFET, a first N-type CNFET, a second N-type CNFET, a third N-type CNFET, a fourth N-type CNFET, a fifth N-type CNFET, a sixth N-type CNFET, a seventh CNFET, an eighth N-type CNFET and a ninth N-type CNFET. The carbon nanotube ternary SRAM cell has the advantages of being lower in power consumption, capable of solving the half-select problem and the read-disturb problem and high in static noise margin.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.