Method for manufacturing semiconductor device and semiconductor manufacturing apparatus used for the method
US10755920B2 · kind B2 · utility
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5References
13Claims
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Key dates
| Filing date | Jul 27, 2016 |
| Grant date | Aug 25, 2020 |
| Priority date | — |
| Expiry date | Aug 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for manufacturing a semiconductor device includes: thermally-oxidizing a surface of a to-be-processed base made by SiC as body material to form a silicon dioxide film, by supplying gas containing oxidation agent to the surface of the to-be-processed base; exchanging ambient gas containing the oxidation agent after forming the silicon dioxide film, by decreasing a partial pressure of the oxidation agent in the ambient gas to 10 Pa or less; and after exchanging the ambient gas, lowering a temperature of the to-be-processed base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.