Method of manufacturing integrated circuit device
US10755932B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2018 |
| Grant date | Aug 25, 2020 |
| Priority date | — |
| Expiry date | Sep 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To manufacture an integrated circuit device, a diffusion buffer layer and a carbon-containing layer are sequentially formed on a plurality of fin-type active regions formed in a substrate. A carbon-containing mask pattern is formed to have an opening exposing a portion of the diffusion buffer layer by etching the carbon-containing layer using an etching gas including an oxygen atom while the diffusion buffer layer is blocking oxygen from diffusing into the fin-type active regions. Impurity ions are implanted into some fin-type active regions through the opening and the diffusion buffer layer using the carbon-containing mask pattern as an ion-implantation mask, the some fin-type active regions being selected from among the plurality of fin-type active regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.