Method for characterizing ohmic contact electrode performance of semiconductor device
US10755990B2 · kind B2 · utility
1Cited by
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5Claims
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Key dates
| Filing date | Apr 6, 2019 |
| Grant date | Aug 25, 2020 |
| Priority date | — |
| Expiry date | Apr 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method for characterizing ohmic contact electrode performance of a semiconductor device. The method comprises: preparing two sets of testing patterns on a semiconductor device; testing resistance values of the two sets of testing patterns respectively; calculating a sheet resistance of an ohmic contact area according to the obtained resistance values; and evaluating the ohmic contact electrode performance of the semiconductor device according to the sheet resistance of the ohmic contact electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.