Radiation-tolerant unit MOSFET hardened against single event effect and total ionizing dose effect
US10756028B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2018 |
| Grant date | Aug 25, 2020 |
| Priority date | — |
| Expiry date | Oct 31, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/552
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a radiation-tolerant unit MOSFET to block a leakage current path caused by a total ionizing dose effect and reduce influence of a current pulse generated due to a single event effect. The radiation-tolerant unit MOSFET includes a poly gate layer for designating a gate region and at least one dummy gate region, a source and a drain, and a P+ layer and a P-active layer for specifying a P+ region to the source and the drain, and a dummy drain allowing application of a voltage. An electronic part that may normally operate is provided even a radiation environment where particle radiation and electromagnetic radiation are present.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.