Patent · US Active

Radiation-tolerant unit MOSFET hardened against single event effect and total ionization dose effect

US10756167B2 · kind B2 · utility

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1References

13Claims

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Assignee

KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY · KR

Inventors

Hee Chul Lee · Daejeon, KR
Young Tak Roh · Daejeon, KR

Key dates

Filing date	Nov 14, 2018
Grant date	Aug 25, 2020
Priority date	—
Expiry date	Nov 14, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/0241
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Provided is a radiation-tolerant 3D unit MOSFET having at least one selected from a dummy drain (DD), an N-well layer (NW), a deep N-well layer (DNW), and a P+ layer to minimize an influence by a total ionization dose effect and an influence by a single event effect.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.