Precursor composition for forming amorphous metal oxide semiconductor layer, amorphous metal oxide semiconductor layer, method for producing same, and semiconductor device
US10756190B2 · kind B2 · utility
2Cited by
8References
8Claims
0Family size
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Key dates
| Filing date | Jul 26, 2011 |
| Grant date | Aug 25, 2020 |
| Priority date | — |
| Expiry date | Jul 26, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/3293
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The invention provides a precursor composition for forming an amorphous metal oxide semiconductor layer, containing a metal salt, a primary amide, and a water-based solution. An amorphous metal oxide semiconductor layer is formed by use of the composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.