Texturing method for diamond wire cut polycrystalline silicon slice
US10756219B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2016 |
| Grant date | Aug 25, 2020 |
| Priority date | — |
| Expiry date | Oct 4, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
It discloses a texturing method for a diamond wire cut polycrystalline silicon slice, including the following steps: firstly, immersing the diamond wire cut polycrystalline silicon slice into a mixed aqueous solution of an alkali solution and an alkali reaction control agent, removing a damaged layer on a surface of the silicon slice, and then immersing the silicon slice into a hydrofluoric acid solution containing inorganic ions and organic molecules for reaction; secondly, pretreating the polycrystalline silicon surface by a mixed solution of hydrofluoric acid and hydrogen peroxide, adding a pore-forming regulator at the same time, and finally texturing the surface of the silicon slice by a mixed acid solution of hydrofluoric acid and nitric acid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.