Method and composition
US10756272B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Jun 27, 2017 |
| Grant date | Aug 25, 2020 |
| Priority date | — |
| Expiry date | Jun 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/151
Abstract
A method of forming an n-doped organic semiconductor, the method comprising: formation of an n-dopant reagent by reaction of a composition comprising two or more precursor units for forming the n-dopant reagent and an organic semiconductor; and n-doping the organic semiconductor. One or more of the precursor units may be a substituent of a polymeric repeat unit. The n-doped organic semiconductor may be an electron-injection layer of an organic light-emitting device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.