Controlled gate-source voltage N-channel field effect transistor (NFET) gate driver
US10756644B1 · kind B1 · utility
11Cited by
10References
20Claims
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Inventor
Key dates
| Filing date | Sep 16, 2019 |
| Grant date | Aug 25, 2020 |
| Priority date | — |
| Expiry date | Sep 16, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B40/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Controlling gate-source voltage with a gate driver in a secondary-side controller in a secondary-controlled converter is described. In one embodiment, an apparatus includes a provider field effect transistor (FET) coupled to a transformer and the secondary-side controller coupled to the transformer. The gate driver is integrated on the secondary-side controller and is configured to control the gate-source voltage and slew rate of the secondary-side FET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.