Hermetic vertical shear weld wafer bonding
US10759658B2 · kind B2 · utility
1Cited by
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19Claims
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Key dates
| Filing date | Dec 10, 2018 |
| Grant date | Sep 1, 2020 |
| Priority date | — |
| Expiry date | Dec 10, 2038 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/038
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
In described examples, a first metal layer is arranged along a periphery of a cavity to be formed between a first substrate and a second substrate. A second metal layer is arranged adjacent to the first metal layer, where the second metal layer includes a cantilever. The cantilever is arranged to deform in response to forces applied from a contacting structure of the second substrate during bonding of the first substrate to the second substrate. The deformed cantilevered is arranged to impede contaminants against contacting an element within the cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.