Polishing compositions and methods of using same
US10759970B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2019 |
| Grant date | Sep 1, 2020 |
| Priority date | — |
| Expiry date | Mar 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion containing a C12 to C40 hydrocarbon group; and a hydrophilic portion containing at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group; in which the hydrophobic portion and the hydrophilic portion are separated by zero to ten alkylene oxide groups. The polishing composition can have a pH of about 2 to about 6.5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.