Patent · US Active

Memory devices

US10762947B2 · kind B2 · utility

3Cited by
6References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 19, 2019
Grant dateSep 1, 2020
Priority date
Expiry dateApr 19, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/15311
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory device is provided. The memory device receives a main clock signal and provides an internal main clock signal; a data clock buffer to receive a data clock signal; and a latency control circuit configured to generate latency information based on the data clock signal and provide the latency information to a data circuit. The latency control circuit includes: a divider configured to generate divided-by-two clock signals based on the data clock signal; a divider configured to generate divided-by-four clock signals based on a first group of the divided-by-two clock signals; a first synchronization detector configured to output divided-by-two alignment signals indicating whether a second group of divided-by-two clock signals is synchronized with the data clock signal; and a latency selector configured to detect phases of the divided-by-four clock signals based on the divided-by-two alignment signals and adjust a latency of the main clock signal based on the phases.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.