Patent · US Active

Two-dimensionally accessible non-volatile memory

US10762957B2 · kind B2 · utility

1Cited by

7References

4Claims

0Family size

Assignee

University of Pittsburgh—Of the Commonwealth System of Higher Education · US

Inventors

Yiran Chen · Eden Prairie, US
Zheng Li · Longbeilingcun, CN
Hai Li · Wuxi, CN

Key dates

Filing date	Jun 28, 2017
Grant date	Sep 1, 2020
Priority date	—
Expiry date	Jun 28, 2037

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/77
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A two-dimensional accessible non-volatile memory apparatus includes an array comprising a plurality of non-volatile memory cells, the array being a crossbar-based non-volatile memory structure, the memory cells being arranged in a plurality of rows and a plurality of columns. The apparatus further includes row read/write circuitry coupled to the array and structured and configured to provide read and write access to the memory cells in any one of the rows on an individual row basis, and column read/write circuitry coupled to the array and structured and configured to provide read and write access to the memory cells in any one of the columns on an individual column basis.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.