Polishing compositions and methods of using same
US10763119B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2019 |
| Grant date | Sep 1, 2020 |
| Priority date | — |
| Expiry date | Mar 18, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09G1/02
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion and a hydrophilic portion; in which the hydrophobic portion includes a C12 to C40 hydrocarbon group and is separated by zero to ten alkylene oxide groups from the hydrophilic portion. The polishing composition has a pH of about 2 to about 6.5, and can have a ratio of a removal rate for a silicon oxide to a removal rate for a silicon nitride of at least about 3:1 when polishing a patterned wafer comprising at least silicon nitride patterns overlayed with at least silicon oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.