Non-contact method to monitor and quantify effective work function of metals
US10763179B2 · kind B2 · utility
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6References
15Claims
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Key dates
| Filing date | Feb 26, 2016 |
| Grant date | Sep 1, 2020 |
| Priority date | — |
| Expiry date | May 25, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N17/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An example semiconductor wafer includes a semiconductor layer, a dielectric layer disposed on the semiconductor layer, and a layer of the metal disposed on the dielectric layer. An example method of determining an effective work function of a metal on the semiconductor wafer includes determining a surface barrier voltage of the semiconductor wafer, and determining a metal effective work function of the semiconductor wafer based, at least in part, on the surface barrier voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.