Packaged RF power amplifier
US10763227B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2018 |
| Grant date | Sep 1, 2020 |
| Priority date | — |
| Expiry date | Dec 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a packaged radiofrequency (RF) power amplifier. The present disclosure further relates to a semiconductor die that is used in such a power amplifier and to an electronic device or system that comprises the semiconductor die and/or power amplifier. According to the disclosure, the semiconductor die comprises a second drain bond assembly arranged spaced apart from the first drain bond assembly and electrically connected thereto, wherein the second drain bond assembly is arranged closer to the input side of the semiconductor die than the first drain bond assembly. The RF power amplifier comprises a first plurality of bondwires which extend between the first drain bond assembly and the output lead, and a second plurality of bondwires which extend from the second drain bond assembly to a first terminal of a grounded capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.