Patent · US Active

Semiconductor structure

US10763229B2 · kind B2 · utility

1Cited by
1References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 8, 2019
Grant dateSep 1, 2020
Priority date
Expiry dateNov 8, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/18162
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor structure includes a transceiver, a molding surrounding the transceiver, a plurality of vias extending through the molding, and a RDL disposed over the transceiver and the plurality of vias. In some embodiments, the RDL includes an antenna disposed over and electrically connected to the transceiver, and a dielectric layer surrounding the antenna. In some embodiments, the antenna includes an elongated portion extending over the molding and a via portion electrically connected to the transceiver.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.