Semiconductor device and method of manufacturing the same
US10763281B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2017 |
| Grant date | Sep 1, 2020 |
| Priority date | — |
| Expiry date | Sep 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1201
Abstract
A semiconductor device includes a base substrate, a first thin film transistor disposed on the base substrate, a second thin film transistor disposed on the base substrate, and a plurality of insulating layers disposed on the base substrate. The first thin film transistor includes a first input electrode, a first output electrode, a first control electrode, and a first oxide semiconductor pattern, which are disposed on the base substrate. The second thin film transistor includes a second input electrode, a second output electrode, a second control electrode, and a second oxide semiconductor pattern, which are disposed on the base substrate. The first oxide semiconductor pattern includes a crystalline oxide semiconductor, and the second oxide semiconductor pattern includes an oxide semiconductor having a crystal structure different from a crystal structure of the first oxide semiconductor pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.