Stackable cross-point phase-change material memory array with a resistive liner

US10763307B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Fabio Carta · Pleasantville, US
• Chung H. Lam · Williston, US
• Matthew J. BrightSky · Pound Ridge, US
• Robert L. Bruce · White Plains, US

Key dates

• Filing date: Apr 10, 2019
• Grant date: Sep 1, 2020
• Expiry date: Apr 10, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A method of forming a phase change material memory array is provided. The method includes forming a lower metallization layer on a substrate, and forming a plurality of upright slabs, where each of the slabs includes a lower buffer segment on the lower metallization layer, a phase change material segment on the lower buffer segment, an upper buffer segment on the phase change material segment, and an upper conductive segment on the upper buffer segment. The method further includes forming a resistive liner on the plurality of upright slabs, and forming a sidewall spacer layer on the resistive liner. The method further includes removing portions of the sidewall spacer layer and the resistive liner on the substrate and the upper conductive segment, wherein another portion of the resistive liner remains on the phase change material segment.