Semiconductor device
US10763335B2 · kind B2 · utility
1Cited by
4References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2018 |
| Grant date | Sep 1, 2020 |
| Priority date | — |
| Expiry date | Nov 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate having an active pattern therein, a gate electrode extending across the active pattern and a source/drain region on the active pattern laterally adjacent the gate electrode. The device further includes a contact structure including a first contact on the source/drain region, a second contact on the first contact and a spacer on sidewalls of the first and second contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.