Organic thin film transistor
US10763446B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2018 |
| Grant date | Sep 1, 2020 |
| Priority date | — |
| Expiry date | May 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/621
Abstract
An organic thin film transistor includes a substrate, a source/drain layer that is located on the substrate and has a source region and a drain region, a first buffer layer that is located between the source region and the drain region, a semiconductor layer that is located on the source/drain layer and the first buffer layer, a gate insulating layer, and a gate electrode. The first buffer layer covers at least one portion of the source region and at least one portion of the drain region. The first buffer layer is located among the semiconductor layer, the source region, the drain region, and the substrate. The gate insulating layer covers the source/drain layer and the semiconductor layer. The gate electrode is located on the gate insulating layer, and a portion of the gate insulating layer is located between the gate electrode and the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.