Lateral current injection electro-optical device with well-separated doped III-V layers structured as photonic crystals
US10763644B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2019 |
| Grant date | Sep 1, 2020 |
| Priority date | — |
| Expiry date | Sep 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A lateral current injection electro-optical device includes a slab having a pair of structured, doped layers of III-V semiconductor materials arranged side-by-side in the slab, the pair including an n-doped layer and a p-doped layer, each of the p-doped layer and the n-doped layer includes a two-dimensional photonic crystal, and a separation section extending between the pair of structured layers, the separation section separates the pair of structured layers, the separation section includes current blocking trenches, and an active region of III-V semiconductor gain materials between the current blocking trenches that form a photonic crystal cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.