Patent · US Active

Microphone and manufacturing method therefor

US10764693B2 · kind B2 · utility

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12Claims
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Key dates

Filing dateJul 25, 2018
Grant dateSep 1, 2020
Priority date
Expiry dateJul 25, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH04R2201/003
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

The present application teaches microphones and manufacturing methods therefor and relates to the field of semiconductor technologies. In some implementations, a method may include: providing a substrate structure, the substrate structure including a substrate and a first insulating layer covering a first part of the substrate; forming a first electrode plate layer, the first electrode plate layer covering a part of the first insulating layer; and forming a second insulating layer, the second insulating layer covering a part of a region of the first insulating layer which is not covered by the first electrode plate layer and a part of the first electrode plate layer, where when seen from the top, the first electrode plate layer and the second insulating layer form an angle, the angle exposes a second part of the substrate, and a degree θ of the angle is larger than or equal to 90° and is smaller than or equal to 180°. The present application can improve a problem of unexpected holes formed in the microphone.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.