Element substrate
US10766255B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Mar 29, 2019 |
| Grant date | Sep 8, 2020 |
| Priority date | — |
| Expiry date | Mar 29, 2039 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB41J2/14129
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
Provided is an element substrate with suppressed variations in resistance though having a high resistance. In an element substrate equipped with a heat generating resistor that generates thermal energy for ejecting a liquid, the heat generating resistor is a stacked structure having stacked a plurality of resistor layers including a first resistor layer and a second resistor layer containing a metal silicon nitride and the first resistor layer and the second resistor layer are different from each other in at least one of a silicon content in the metal silicon oxide and a metal element contained in the metal silicon nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.