Method of manufacturing semiconductor material from mayenite
US10766784B2 · kind B2 · utility
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Key dates
| Filing date | Dec 25, 2018 |
| Grant date | Sep 8, 2020 |
| Priority date | — |
| Expiry date | Apr 4, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/40
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of preparation of semiconductor material. The method includes: adding an organic substance containing a benzene ring and dodecacalcium hepta-aluminate (12CaO.7Al2O3 or C12A7) to a test tube, and sealing the test tube; heating the test tube to a temperature of 200-300° C., and holding the temperature for 1 to 3 hours; and continuously heating the test tube to a temperature of 900-1300° C., and holding the temperature for 10-120 hours.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.