Chemical mechanical polishing slurry composition for polishing polycrystalline silicon film
US10767081B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Nov 15, 2018 |
| Grant date | Sep 8, 2020 |
| Priority date | — |
| Expiry date | Nov 15, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A chemical mechanical polishing slurry composition for polishing a polycrystalline silicon film is presented, comprising: a solvent; a polishing agent; a pH adjuster; and at least one additive selected from the group consisting of a compound represented by Chemical Formula 1 below, a compound represented by Chemical Formula 2 below, and a tautomer thereof.The chemical mechanical polishing slurry composition for polishing a polycrystalline silicon film exhibits a high polishing speed and has various polishing selectivities when employed in a process for polishing a polycrystalline silicon film of a semiconductor wafer, and thus the composition may be effectively used as a composition for a process for polishing a polycrystalline silicon surface for the formation of highly integrated multilayer structured devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.