IGBT modeling method and circuit simulation method
US10769337B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Nov 9, 2017 |
| Grant date | Sep 8, 2020 |
| Priority date | — |
| Expiry date | Sep 17, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2111/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An IGBT modeling method includes creating piece-wise line functions describing a collector-emitter voltage vce, a collector current ic and a gate-emitter voltage vge of the IGBT during a switching-on transient based on an internal structure of the IGBT and transient processes of the IGBT. The IGBT modeling method further includes creating piece-wise line functions describing the collector-emitter voltage vce, the collector current ic and the gate-emitter voltage vge of the IGBT during a switching-off transient based on the internal structure of the IGBT and the transient processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.