Charge pump drive circuit with two switch signals
US10770153B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2018 |
| Grant date | Sep 8, 2020 |
| Priority date | — |
| Expiry date | Dec 19, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/2227
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A charge pump drive circuit is disclosed. The charge pump drive circuit provides a switch signal to a charge pump which provides a memory with a read voltage and a read current. The charge pump drive circuit includes a read drive circuit and a standby drive circuit. The read drive circuit is powered by a first power supply and provides the charge pump with a switch signal when the memory is in an active reading state. The standby drive circuit is powered by a second power supply and provides the charge pump with a switch signal when the memory is in a read standby state. The first power supply provides a voltage level ranging from 1.6 V to 3.8 V, and the second power supply provides a voltage level of 1.5 V.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.