Image sensor with metal grids and manufacturing method thereof
US10770498B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 22, 2018 |
| Grant date | Sep 8, 2020 |
| Priority date | — |
| Expiry date | Aug 22, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
A method for manufacturing the image sensor includes providing a substrate structure; forming a mask layer on the substrate structure, the mask layer having openings; depositing a metal grid material covering a surface of the mask layer and a bottom of the openings; and stripping the mask layer for removing a portion of the metal grid material on the top surface of the mask layer. The substrate structure includes: a substrate having a first surface; a plurality of pixels in the substrate; isolation structures around each of the plurality of pixels; and an anti-reflective coating on the first surface of the substrate. The openings include first openings exposing a portion of the first surface of the substrate structure above the isolation structures. A remaining portion of the metal grid material at the bottom of the openings forms metal grids.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.