Layered structure, semiconductor device including layered structure, and semiconductor system including semiconductor device
US10770553B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Sep 27, 2018 |
| Grant date | Sep 8, 2020 |
| Priority date | — |
| Expiry date | Sep 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/86
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a first aspect of a present inventive subject matter, a layered structure includes a first semiconductor layer containing as a major component an ε-phase oxide semiconductor crystal; and a second semiconductor layer positioned on the first semiconductor layer and containing as a major component an oxide semiconductor crystal with a tetragonal crystal structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.