Lateral insulated-gate bipolar transistor and manufacturing method therefor
US10770572B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 21, 2017 |
| Grant date | Sep 8, 2020 |
| Priority date | — |
| Expiry date | Jun 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
Abstract
A lateral insulated-gate bipolar transistor and a manufacturing method therefor. The lateral insulated-gate bipolar transistor comprises a substrate, an anode terminal and a cathode terminal on the substrate, and a drift region and a gate electrode located between the anode terminal and the cathode terminal. The anode terminal comprises an N-shaped buffer zone on the substrate, a P well in the N-shaped buffer zone, an N+ zone in the P well, a groove located above the N+ zone and partially encircled by the P well, polycrystalline silicon in the groove, P+ junctions at two sides of the groove, and N+ junctions at two sides of the P+ junctions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.