Semiconductor device and method for manufacturing the same
US10770574B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2018 |
| Grant date | Sep 8, 2020 |
| Priority date | — |
| Expiry date | Oct 16, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/257
Abstract
Embodiments of the present disclosure provide a semiconductor device and a method for manufacturing the same. The semiconductor device includes an active region and an inactive region located outside of the active region, the semiconductor device including a substrate, a semiconductor layer including a first semiconductor layer located in the active region and a second semiconductor layer located in the inactive region, a source, a drain, and a gate. A via hole penetrated through the substrate and the semiconductor layers below the source is provided below the source. A part of the via hole is located in the second semiconductor layer of the inactive region and penetrates at least one part of the second semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.