Al—Ga—N template, a method for preparing Al—Ga—N template, and semiconductor device comprising Al—Ga—N template
US10770615B2 · kind B2 · utility
0Cited by
0References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2018 |
| Grant date | Sep 8, 2020 |
| Priority date | — |
| Expiry date | Jun 29, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/815
Abstract
An AlGaN template including a substrate and an Al1-xGaxN crystallization thin film deposited on the substrate, where 0<x<1. A method for preparing the AlGaN template includes providing a substrate; and depositing an Al1-xGaxN crystallization thin film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.