Method for manufacturing phase change memory

US10770656B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Gloria Wing Yun Fraczak · Floral Park, US
• Matthew J. BrightSky · Pound Ridge, US
• Chung H. Lam · Williston, US
• Fabio Carta · Pleasantville, US
• Robert L. Bruce · White Plains, US
• Takeshi Masuda · Musashino, JP
• Koukou Suu · Susono, JP

Key dates

• Filing date: Sep 20, 2018
• Grant date: Sep 8, 2020
• Expiry date: Sep 20, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8613

Abstract

Method(s) and apparatuses for forming a phase change memory. A method includes: forming a crystalline phase-change layer at a first position in along a surface of a first semiconductor layer, and forming an amorphous phase-change layer at a second position along the surface of a second semiconductor layer, wherein the crystalline phase-change layer and the amorphous phase-change layer are in contact.