Method for producing SiC epitaxial wafer including forming epitaxial layer under different conditions
US10774444B2 · kind B2 · utility
2Cited by
3References
11Claims
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Key dates
| Filing date | Dec 12, 2016 |
| Grant date | Sep 15, 2020 |
| Priority date | — |
| Expiry date | May 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02634
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
This method of producing a SiC epitaxial wafer having an epitaxial layer on a SiC single crystal substrate, and includes: when performing crystal growth of the epitaxial layer, a step of forming a part of an epitaxial layer under first conditions at an initial stage where the crystal growth is started; and a step of forming a part of a SiC epitaxial layer under second conditions in which a Cl/Si ratio is decreased and a C/Si ratio is increased in comparison to those in the first conditions, wherein the C/Si ratio is equal to or less than 0.6 and the Cl/Si ratio is equal to or more than 5.0 in the first conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.