MEMS strain gauge sensor and manufacturing method
US10775248B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2016 |
| Grant date | Sep 15, 2020 |
| Priority date | — |
| Expiry date | May 31, 2037 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0176
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention is related to a sensor. In particular, the present invention is related to a MEMS strain gauge die and its fabrication process. The MEMS strain gauge die comprises a handle, a device layer and a cap all connected together. A silicon oxide layer is formed between the handle and the device layer. Another silicon oxide layer is formed between the device layer and the cap. Recesses are respectively formed on the handle and the cap and face each other. The handle recess and the cap recess are connected to form a cavity. The device layer, which spans the cavity, further comprises a bridge on which a plurality of piezoresistive sensing elements are formed. The present strain gauge die is more immune to temperature effects. It is especially suitable for operating in a high temperature environment and is capable of delivering accurate and reliable strain measurements at low cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.