Heat assisted perpendicular spin transfer torque MRAM memory cell
US10777248B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2019 |
| Grant date | Sep 15, 2020 |
| Priority date | — |
| Expiry date | Jul 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive random access memory (MRAM) memory cell comprises a pinned layer having fixed direction of magnetization that is perpendicular to a plane of the pinned layer, a first free layer having a direction of magnetization that can be switched and is perpendicular to a plane of the first free layer, a tunnel barrier positioned between the pinned layer and the first free layer, a second free layer having a direction of magnetization that can be switched, and a spacer layer positioned between the first free layer and the second free layer. Temperature dependence of coercivity of the second free layer is greater than temperature dependence of coercivity of the first free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.