Patent · US Active

Biased pulse CMP groove pattern

US10777418B2 · kind B2 · utility

0Cited by
43References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 5, 2017
Grant dateSep 15, 2020
Priority date
Expiry dateOct 5, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/67017
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The polishing pad is suitable for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The polishing pad includes radial feeder grooves in a polishing layer separating the polishing layer into polishing regions. The radial feeder grooves extend at least from a location adjacent the center to a location adjacent the outer edge of the polishing pad. Each polishing region including a series of biased grooves that connects a pair of adjacent radial feeder grooves. A majority of the biased grooves having either an inward bias toward the center of the polishing pad or an outward bias for directing polishing fluid toward the outer edge of the polishing pad.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.